NB6027E-403S-L01RAB-00-0

NB6027E-403S-L01RAB-00-0

  • image of Microphones>NB6027E-403S-L01RAB-00-0
  • image of Microphones>NB6027E-403S-L01RAB-00-0
NB6027E-403S-L01RAB-00-0
Microphones
Huizhou N Acoustics Co., Ltd
MIC COND NC -40
-
Bulk
1
NB6000
I&C
NB-IoT
S1NB60
新电元-Shindengen
Bridge Diodes SMD
DCNLJ200NB60
力特-Littelfuse
High Voltage DC Contactor Relays
DCNLH125NB60
力特-Littelfuse
High Voltage DC Contactor Relays
DCNLM50NB60
力特-Littelfuse
High Voltage DC Contactor Relays
DCNLJ125NB60
力特-Littelfuse
High Voltage DC Contactor Relays
DCNLR200NB60
力特-Littelfuse
High Voltage DC Contactor Relays
DCNLB200NB60
力特-Littelfuse
High Voltage DC Contactor Relays
STW16NB60
意法-ST
N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMesh™ MOSFET
STP5NB60
意法-ST
N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
STGP3NB60
意法-ST
N-CHANNEL 3A - 600V TO-220 PowerMESH IGBT
STP3NB60
意法-ST
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STB9NB60
意法-ST
N - CHANNEL 600V - 0.7ohm - 9A - I2PAK/D2PAK PowerMESH MOSFET
STB7NB60
意法-ST
N - CHANNEL 600V - 1.0 OMH - 7.2A - I2PAK/D2PAK PowerMESH MOSFET
STP7NB60
意法-ST
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STB5NB60
意法-ST
N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET
STH13NB60
意法-ST
N - CHANNEL 600V - 0.48ohm - 13A - TO-247/ISOWATT218 PowerMESH MOSFET
TSM4NB60
台半-TSC
600V N-Channel Power MOSFET
TSM10NB60
台半-TSC
High power and current handling capability
TSM1NB60
台半-TSC
600V N-Channel Power MOSFET
STD2NB60
意法-ST
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STGP7NB60
意法-ST
N-CHANNEL 7A - 600V TO-220 PowerMESH IGBT
TSM2NB60
台半-TSC
600V N-Channel Power MOSFET
STW12NB60
意法-ST
N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh™II MOSFET
TSM6NB60
台半-TSC
600V N-Channel MOSFET
STU11NB60
意法-ST
N-CHANNEL 600V - 0.5ohm - 11A - Max220 PowerMESH MOSFET
STW10NB60
意法-ST
N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET
STU13NB60
意法-ST
N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STB3NB60
意法-ST
N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET
STGY50NB60
意法-ST
N-CHANNEL 50A - 600V MAX247 PowerMESH IGBT
STD1NB60
意法-ST
N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET
STW13NB60
意法-ST
MOSFET N-CH 600V 13A TO-247
STGP10NB60SD
意法-ST
16 A、600 V低压降IGBT,带柔软、恢复速度极快的二极管
STGE200NB60S
意法-ST
N沟道600 V、150 A低压降IGBT
STGF7NB60SL
意法-ST
7 A、600 V低压降IGBT
STGP10NB60S
意法-ST
16 A、600 V低压降IGBT
STGD7NB60ST4
意法-ST
7 A, 600 V, low drop IGBT
STGF20NB60S
意法-ST
PowerMESH IGBT, S series 600 V, 13 A low drop
STGF10NB60SD
意法-ST
16 A、600 V低压降IGBT,带柔软、恢复速度极快的二极管
STGD7NB60S
意法-ST
Low Drop "S" series
STGW35NB60SD
意法-ST
Low Drop "S" series
STGD3NB60SD
意法-ST
N-channel 3 A, 600 V low drop IGBT
S1NB60-7102
新电元-Shindengen
桥式整流二极管
S1NB60-7101
新电元-Shindengen
桥式整流二极管
S1NB60-7062
新电元-Shindengen
桥式整流二极管
TSM1NB60CP
台半-TSC
600V, 1A, Single N-Channel Power MOSFET
TSM1NB60SCT
台半-TSC
600V, 0.5A, Single N-Channel Power MOSFET
TSM2NB60CH
台半-TSC
600V, 2.3A, Single N-Channel Power MOSFET
TSM4NB60CI
台半-TSC
600V, 4A, Single N-Channel Power MOSFET
TSM60NB600CP
台半-TSC
600V, 7A, Single N-Channel Power MOSFET


MIC COND NC -40DB 0.236"DIA

Product parameters
PDF(1)
TYPEDESCRIPTION
MfrHuizhou N Acoustics Co., Ltd
Series-
PackageBulk
Product StatusACTIVE
Size / Dimension0.236" Dia (6.00mm)
Sensitivity-40dB ±3dB @ 100dB SPL
ShapeCircular
TypeElectret Condenser
S/N Ratio60dB
TerminationSolder Pads
DirectionNoise Cancelling
Port LocationTop
Height (Max)0.114" (2.90mm)
Current - Supply500 µA
Voltage Range1 V ~ 10 V

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