[API] response: [200 OK] "{\"code\":200,\"msg\":\"success\",\"data\":{\"id\":2089,\"parent_id\":2045,\"name\":\"IGBTs\",\"path\":\"0;19;2045;2089;\",\"product_count\":7257,\"slug_name\":\"igbts\",\"description\":\"IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and (truncated) ... [elapsed: 0.15739 secs]
[API] response: [200 OK] "{\"code\":200,\"msg\":\"success\",\"data\":{\"id\":19,\"parent_id\":0,\"name\":\"Discrete Semiconductor Products\",\"path\":\"0;19;\",\"product_count\":252065,\"slug_name\":\"discrete-semiconductor-products\",\"description\":\"Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circui (truncated) ... [elapsed: 0.073959 secs]
[API] response: [200 OK] "{\"code\":200,\"msg\":\"success\",\"data\":{\"id\":2089,\"parent_id\":2045,\"name\":\"IGBTs\",\"path\":\"0;19;2045;2089;\",\"product_count\":7257,\"slug_name\":\"igbts\",\"description\":\"IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and (truncated) ... [elapsed: 0.075655 secs]
[API] response: [200 OK] "{\"code\":200,\"msg\":\"success\",\"data\":{\"id\":2089,\"parent_id\":2045,\"name\":\"IGBTs\",\"path\":\"0;19;2045;2089;\",\"product_count\":7257,\"slug_name\":\"igbts\",\"description\":\"IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and (truncated) ... [elapsed: 0.09536 secs]
